PUMD12/DG/B4X
fabrikant:
Nexperia USA Inc.
Categorie:
Halfgeleiders
specificaties
Categorie:
Discrete halfgeleiderproducten
Transistors
Bipolair (BJT)
Bipolaire transistorarrays, voorgevoelig
Stroom - collector (Ic) (max):
100 mA
Productstatus:
Actief
Type transistor:
1 NPN, 1 PNP - Voorafgesplitst (dubbel)
Frequentie - Overgang:
230 MHz, 180 MHz
Montage-type:
Oppervlakte
Pakket:
Tape & Reel (TR)
Reeks:
-
Vce verzadiging (max) @ Ib, Ic:
150mV @ 500μA, 10mA
Spanning - Verdeling van de collectoremitter (max):
50 V
Verpakking van de leverancier:
6-TSSOP
Resistor - basis (R1):
47 kOhms
Mfr:
Nexperia USA Inc.
Resistor - basis van de zender (R2):
47 kOhms
Stroom - collectievergrens (maximaal):
1µA
Vermogen - Max.:
300 mW
Pakket / doos:
6-TSSOP, SC-88, SOT-363
Gelijkstroomwinst (hFE) (min) @ Ic, Vce:
80 @ 5mA, 5V
Basisproductnummer:
PUMD12
Inleiding
Bipolaire transistor (BJT) 1 NPN, 1 PNP - 50V 100mA 230MHz, 180MHz 300mW
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| Beeld | deel # | Beschrijving | |
|---|---|---|---|
|
|
PUMD48.115 |
|
|
|
|
NHUMD9X |
|
|
|
|
PBLS4003D,115 |
|
|
|
|
PQMH13Z |
|
|
|
|
PUMD10,115 |
|
|
|
|
PUMD17,115 |
|
|
|
|
PUMD15,115 |
|
|
|
|
NHUMH1X |
|
|
|
|
PEMB10,115 |
|
|
|
|
PUMH1/DG/B3,115 |
|
|
|
|
NHUMB9F |
|
|
|
|
PEMH14,115 |
|
|
|
|
PEMD4.115 |
|
|
|
|
NHUMB11F |
|
|
|
|
PUMH2/DG/B3,115 |
|
|
|
|
PUMH13,115 |
|
|
|
|
PUMH9.125 |
|
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